ON THE ROLE OF INTERFACIAL DEFECT SITES DURING SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED SILICON

ON THE ROLE OF INTERFACIAL DEFECT SITES DURING SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED SILICON

著者名:

掲載資料名:

Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

100

発行年:

1988

開始ページ:

447

終了ページ:

452

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837685 [0931837685]

言語:

英語

請求記号:

M23500/100

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015586
シリーズID:	PA00000011
会議名:	Symposium on fundamentals of beam-solid interactions and transient thermal processing
回次:	1987
会議開催地:	Boston, MA, USA
会議開催年:	1987.11.30-1987.12.03

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