ELECTRICAL PROPERTIES OF 3C-SiC AND ITS APPLICATION TO FET

ELECTRICAL PROPERTIES OF 3C-SiC AND ITS APPLICATION TO FET

著者名:

Yoshida, S.

掲載資料名:

Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

97

発行年:

1987

開始ページ:

259

終了ページ:

264

総ページ数:

6

出版情報:

Pittsburgh, Penn.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837647 [0931837642]

言語:

英語

請求記号:

M23500/97

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015583
シリーズID:	PA00000011
会議名:	Symposium on novel refractory semiconductors
回次:	1987
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

類似資料:

1 国際会議録 Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers Ishida, Y., Kushibe, M., Takahashi, T., Okumura, H., Yoshida, S. Trans Tech Publications	7 国際会議録 Growth of Cubic GaN by MBE and Its Properties Yoshida, S., Okumura, H., Feuillet, G., Hacke, P., Balakrishnan, K. MRS - Materials Research Society
2 国際会議録 Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC Epilayers Ishida, Y., Kushibe, M., Takahashi, T., Okumura, H., Yoshida, S. Trans Tech Publications	8 国際会議録 Thermomechanical Properties of Polyurethane Shape-Memory Polymer Foam Tobushi, H., Okumura, K., Endo, M., Hayashi, S. Trans Tech Publications
3 国際会議録 Characterization of Defects in As-Grown and Electron-Irradiated 3C-SiC Epilayers by Using Slow Positron Itoh,H., Yoshikawa,M., Nashiyama,I., Wei,L., Tanigawa,S., Misawa,S., Okumura,H., Yoshida,S. Trans Tech Publications	9 国際会議録 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics Ishida, Y., Kushibe, M., Takahashi, T., Okumura, H., Yoshida, S. Trans Tech Publications
4 国際会議録 EFFECTS OF GAMMA-RAY IRRADIATION AND THERMAL ANNEALING ON CHARACTERISTICS OF 3C-SiC MOS STRUCTURE Yoshikawa, M., Morita, Y., Itoh, H., Nashiyama, I., Okumura, H., Misawa, S., Yoshida, S. Materials Research Society	10 国際会議録 3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics Ishida, Y., Kushibe, M., Takahashi, T., Okumura, H., Yoshida, S. Trans Tech Publications
5 国際会議録 Electrical and Structural Properties of Al and B Implanted 4H-SiC Tanaka, Y., Kobayashi, N., Okumura, H., Suzuki, R., Ohdaira, T., Hasegawa, M., Ogura, M., Yoshida, S., Tanoue, H. Trans Tech Publications	11 国際会議録 Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy T. Kitamura, S. Nakashima, T. Kato, K. Kojima, H. Okumura Trans Tech Publications
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