ESTIMATION OF DEFECT STATE DENSITIES FROM BULK PHOTOELECTRONIC PROPERTIES OF A-SI,Ge:H ALLOYS

ESTIMATION OF DEFECT STATE DENSITIES FROM BULK PHOTOELECTRONIC PROPERTIES OF A-SI,Ge:H ALLOYS

著者名:

掲載資料名:

Amorphous silicon semiconductors -- Pure and hydrogenated : symposium held April 21-24, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

95

発行年:

1987

開始ページ:

341

終了ページ:

346

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837623 [0931837626]

言語:

英語

請求記号:

M23500/95

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015581
シリーズID:	PA00000011
会議名:	Symposium on amorphous silicon semiconductors
回次:	1987
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.24

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