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INFLUENCE OF PLASMA EXCITATION FREQUENCY ON DEPOSITION RATE AND ON FILM PROPERTIES FOR HYDROGENATED AMORPHOUS SILICON

著者名:
Curtins, H.
Wyrach, N.
Favre, M.
Prasad, K.
Brechet, M.
Shah, A. V.
さらに 1 件
掲載資料名:
Amorphous silicon semiconductors -- Pure and hydrogenated : symposium held April 21-24, 1987, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
95
発行年:
1987
開始ページ:
249
終了ページ:
254
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837623 [0931837626]
言語:
英語
請求記号:
M23500/95
資料種別:
国際会議録

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