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OPTICAL, CHEMICAL AND ELECTRICAL CHARACTERIZATION OF ION-ETCHED GALLIUM ARSENIDE SURFACES

著者名:
Feng, G. F.
Holtz, M.
Zallen, R.
Epp. J. M.
Dillard, J. G.
Cole, E.
Johnson, P.
Sen, S.
Burton, L. C.
さらに 4 件
掲載資料名:
Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
93
発行年:
1987
開始ページ:
381
終了ページ:
384
総ページ数:
4
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837609 [093183760X]
言語:
英語
請求記号:
M23500/93
資料種別:
国際会議録

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