INDIUM ION DOPING DURING Si MOLECULAR BEAM EPITAXY
- 著者名:
Hirashita, N. Noel, J. -P. Rockett, A. Markert, L. Greene, J.-E. Hasan, M. A. Knall, J. Ni, W,.-X. Sundgren, J. _E - 掲載資料名:
- Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 93
- 発行年:
- 1987
- 開始ページ:
- 3
- 終了ページ:
- 8
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837609 [093183760X]
- 言語:
- 英語
- 請求記号:
- M23500/93
- 資料種別:
- 国際会議録
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10
国際会議録
STRAIN-FIELD INDUCED CROSSHATCH FORMATION DURING MOLECULAR BEAM EPITAXY OF InGaAs/GaAs FILMS
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