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ELECTRICAL PROPERTIES OF n- AND p-TYPE In0.53Ga0.47 As LAYERS FORMED BY ION IMPLANTATION AND RAPID THERMAL (FLASH) ANNEAL

著者名:
L:iu, S. G.
Narayan, S. Y.
Magee, C. W.
Wu, C. P.
Kolondra, F.
Paczkowski, J.
Capewell, D.
さらに 2 件
掲載資料名:
Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
92
発行年:
1987
開始ページ:
375
終了ページ:
380
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837593 [0931837596]
言語:
英語
請求記号:
M23500/92
資料種別:
国際会議録

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