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POINT DEFECT EVOLUTION DURING RAPID THERMAL ANNEALING OF Si+-IMPLANTED GaAs

著者名:
掲載資料名:
Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
92
発行年:
1987
開始ページ:
353
終了ページ:
360
総ページ数:
8
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837593 [0931837596]
言語:
英語
請求記号:
M23500/92
資料種別:
国際会議録

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