Blank Cover Image

LOW-TEMPERATURE PHOTOLUMINESCENCE OF MOVCVD GaAs GROWN DIRECTLY ON Si

著者名:
Wilson, B. A.
Bonner, C. E.
Harris, T. D.
Lamont, M. G.
Miller, R. C
Sputz, S. K.
Vermon, S. M.
Haven, V. E.
Lum,. R. M.
Klingert, J. K.
さらに 5 件
掲載資料名:
Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
91
発行年:
1987
開始ページ:
255
終了ページ:
260
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837586 [0931837588]
言語:
英語
請求記号:
M23500/91
資料種別:
国際会議録

類似資料:

1 国際会議録 BAND-EDGE LUMINESCENCE OF MOCVD GaAs GROWN DIRECTLY ON SILICON

Lamont, M. G., Harris, T. D., Sauer, R., Lum, R. M., Klingert, J. K.

Materials Research Society
7 国際会議録 RESONANT PHOTOLUMINESCENCE EXCITATION IN GaAs GROWN DIRECTLY ON Si

Zemon, S., Jagannath, C., Shastry, S.K., Miniscalco, W.J., Lambert, G.

Materials Research Society
2 国際会議録 NEAR GAP PHOTOLUMINESCENCE OF GaAs GROWN DIRECTLY ON InP

Schnoes, Lamoni M., Harris, T. D., Hobson, W. S., Lum., R. M., Klingent, J. K.

Materials Research Society
8 国際会議録 COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY …

Awal, Abdul M., Lee, E. H., Chan, E. Y., Lum R. M., Klingert, J. K., Sheng, T. T., Hopkins, L. C., Opila, R. L.

Materials Research Society
3 国際会議録 IMPROVED MOCVD GROWTH OF GaAs ON Si

Lum, R. M., Klingert, J. K., Davidson, B,. A., Lamont, M. G.

Materials Research Society
9 国際会議録 PROPERTIES OF MBE GROWN HETEROSTRUCTURES OF GaAs/InSb AND InP/InSb

Asom, M. T., Fitzgerald,m E. A., Thiel,. F. A., People, R,., Eaglesham. D., Luther, L., Sputz, S. K., Kimerling, L. C.

Materials Research Society
4 国際会議録 Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source

Hobson,W.S., McAfee,S.R., Jones,K.S., Paroskevopoulos,N.C., Abernathy,C.R., Sputz,S.K., Harris,T.D., Schnoes,M.Lamont, …

Trans Tech Publications
10 国際会議録 CHARACTERIZATION OF GaAs GROWN BY DIRECT DEPOSITION ON Si

Vernon, S. M., Pearton, s. J., Gibson, J. M., Caruso, R., Abernathy, C. R., Short, K. T., Stavola, M., Haven, V. E., …

Materials Research Society
5 国際会議録 COMPARISON OF LOW VAPOR PRESSURE ORGANOARSENIC COMPOUNDS FOR MOVPE GROWTH OF GaAs

Lum, R. M., Klingert, J. K.

Materials Research Society
11 国際会議録 ATOMIC LAYER EPITAXY OG GaAs ON Si BY MOCVD

Karam, N. H., Haven, V. E., Vermon,. S. M., Tan, J. C., El-Masry, N. A.

Materials Research Society
6 国際会議録 PHOTOLUMINESCENCE AND PHOTOLUMINESCENCE EXCITATION SPECTRA OF GaAS GROWN DIRECTLY ON Si

Zemon, S, Shastry, S.K., Norris, P., Jagannath, C., Lambert, G

Materials Research Society
12 国際会議録 *ALTERNATIVE CHEMISTRIES FOR MOCVD GROWTH OF III-V MATERIALS

Lum, R. M., Klingert, J. K.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12