CHARACTERIZATION OF DISLOCATIONS IN GaAs GROWN ON Si AND Ge

CHARACTERIZATION OF DISLOCATIONS IN GaAs GROWN ON Si AND Ge

著者名:

掲載資料名:

Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

91

発行年:

1987

開始ページ:

161

終了ページ:

166

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837586 [0931837588]

言語:

英語

請求記号:

M23500/91

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015577
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	2nd
会議開催地:	Anaheim, CA, USA
会議開催年:	1987.04.21-1987.04.23

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2 国際会議録 INTERFACE DEFECTS IN GaAs AND GaAs-AlXGa1-XAs GROWN ON Ge Cho, N. -H., McKernan, S., Wagner, D. K., Carter, C. B. Materials Research Society	8 国際会議録 DEFECTS AND INTERFACES IN GaAs GROWN ON Si McKernan, S., Zhu, J.G., Carter, C.B., Caridi, E., Schaff, W. Materials Research Society
3 国際会議録 THE STUDY OF INTERFACES IN GaAs Cho, N.-H., Rasmussen, D.R., McKernan, S., Carter, C.B., Wagner, D.K. Materials Research Society	9 国際会議録 THE MORPHOLOGY OF YBa2Cu3O7-X THIN FILMS GROWN ON CERAMIC SUBSTRATES Tietz, L. A., De Cooman, B. C., Carter, C. B., Lathrop, D. K., Russek, S. E., Buhrman, R. A. Materials Research Society
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