THE EFFECTS OF SURFACE AND INTERFACE DEPLETION REGIONS ON THE PHOTOCONDUCTIVITY OF a-Si:H IN SURFACE CELL STRUCTURES

THE EFFECTS OF SURFACE AND INTERFACE DEPLETION REGIONS ON THE PHOTOCONDUCTIVITY OF a-Si:H IN SURFACE CELL STRUCTURES

著者名:

掲載資料名:

Interfaces, superlattices, and thin films : symposium held December 1-6, 1986, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

77

発行年:

1987

開始ページ:

589

終了ページ:

594

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837562 [0931837561]

言語:

英語

請求記号:

M23500/77

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015562
シリーズID:	PA00000011
会議名:	Symposium on interfaces, superlattices, and thin films
回次:	1986
会議開催地:	Boston, MA, USA
会議開催年:	1986.12.01-1986.12.06

類似資料:

1 国際会議録 GROWTH OF a-Si:H FILMS BY REMOTE PLASMA ENHANCED CVD (RPECVD) Parsons, G.N., Tsu, D.V., Lucovsky, G. Materials Research Society	7 国際会議録 CHEMICAL REACTION PATHWAYS FOR THE DEPOSITION OF AMORPHOUS SILICON-HYDROGEN ALLOYS BY REMOTE PLASMA ENHANCED CVD Parsons, G.N., Tsu, D.V., Lucovsky, G. Materials Research Society
2 国際会議録 THE EFFECT OF WATER VAPOR AND OXYGEN IN THE PROCESSING ENVIRONMENT ON THE PROPERTIES OF SPUTTERED a-Si:H FILMS Wang, C., Parsons, G. N., Lucovsky, G. Materials Research Society	8 国際会議録 FORMATION OF MICROCRYSTALLINE SILICON FILM BY RMS PROCES Wang, Cheng, Parsons, G.N., Buehler, E.C., Memanich, R.J., Lucovsky, G. Materials Research Society
3 国際会議録 NITROGEN INCORPORATION IN a-Si, N:H ALLOY FILMS PRODUCED BY REMOVE PECVD Parsons, G.N., Lucovsky, G. Materials Research Society	9 国際会議録 RAMAN SCATTERING FROM MICROCRYSTALLINE FILMS: CONSIDERATIONS OF COMPOSITE STRUCTURES WITH DIFFERENT OPTICAL ABSORPTION PROPERTIES Nemanich, R.J., Buehler, E.C., LeGrice, Y.M., Shroder, R.E., Parsons, G.N., Wang, C., Lucovsky, G., Boyce, J.B. Materials Research Society
4 国際会議録 a-Si:H THIN FILM TRANSISTORS AND LOGIC CIRCUITS FABRICATED IN AN INTEGRATED MULTICHAMBER SYSTEM Kim, S. S., Wang, C., Parsons, G. N., Lucovsky, G. Materials Research Society	10 国際会議録 *CONTROL OF BONDED SiH IN SILICON OXIDES DEPOSITED BY REMOTE PLASMA ENHANCED CVD Tsu, D. V., Parsons, G. N., Lucovsky, G., Watkins, M. W. Materials Research Society
5 国際会議録 COMPOSITION AND PROPERTIES OF PECVD SILICON NITRIDE FILMS DEPOSITED FROM SiH4, N2, He GASES Souk, J.H., Parsons, G.N., Batey, J. Materials Research Society	11 国際会議録 ANNEALING OF IRREVERSIBLE DEFECTS IN HYDROGENATED AND UNHYDROGENATED AMORPHOUS SILISON THIN FILMS Parsons, G. N., Wang, C., Lucovsky, G. Materials Research Society
6 国際会議録 POLYHYRIDE BONDING GROUPS IN PECVD AMORPHOUS Si THIN FILMS Davidson, B.N., Parsons, G.N., Wang, C., Lucovsky, G. Materials Research Society	12 国際会議録 SUBSTRATE INTERACTIONS IN THE FORMATION OF AMORPHOUS SILICON/DIELECTRIC INTERFACES Parsons, G. N., Kim, S. S., Lucovsky, G. Materials Research Society

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