CONSTANT FINAL-STATE PHOTOEMISSION STUDY OF SILICON FLUORIDE REACTION LAYER CREATED DURING ETCHING: MORPHOLOGY OF THE REACTION LAYER

CONSTANT FINAL-STATE PHOTOEMISSION STUDY OF SILICON FLUORIDE REACTION LAYER CREATED DURING ETCHING: MORPHOLOGY OF THE REACTION LAYER

著者名:

掲載資料名:

Photon, beam, and plasma stimulated chemical processes at surfaces : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

75

発行年:

1987

開始ページ:

451

終了ページ:

458

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837418 [0931837413]

言語:

英語

請求記号:

M23500/75

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015560
シリーズID:	PA00000011
会議名:	Symposium on photon, beam, and plasma stimulated chemical processes at surfaces
回次:	1986
会議開催地:	Boston, MA, USA
会議開催年:	1986.12.01-1986.12.04

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