A STUDY OF THE EFFECTS OF IMPLANTATION DOSE AND ANNEALING TEMPERATURE ON THE FORMATION OF BURIED NITRIDE SOI STRUCTURES

A STUDY OF THE EFFECTS OF IMPLANTATION DOSE AND ANNEALING TEMPERATURE ON THE FORMATION OF BURIED NITRIDE SOI STRUCTURES

著者名:

掲載資料名:

Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

74

発行年:

1987

開始ページ:

603

終了ページ:

608

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837401 [0931837405]

言語:

英語

請求記号:

M23500/74

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015559
シリーズID:	PA00000011
会議名:	Symposium on beam-solid interactions and transient processes
回次:	1986
会議開催地:	Boston, MA, USA
会議開催年:	1986.12.01-1986.12.04

類似資料:

1 国際会議録 DOSE DEPENCE OF DEFECTS IN SILICON PRODUCED BY HIGH DOSE,HIGH TEMPERATURE 0+ IMPLANTATION. HOBBS,A., BARKLIE,R.C., REESON,K., HEMMENT,P.L.F. Trans Tech Publications	7 国際会議録 DETERMINATION OF THE NITROGEN CONTENT OF AS-IMPLANTED AND ANNEALED SIMOX SUBSTRATES Kilner, J. A., Chater, R. J., Biswas, S., Hemment, P. L. F., Reeson, K. J. Materials Research Society
2 国際会議録 IMPROVED SOI FILMS BY HIGH DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING Celler, G.K., Hemment, P.L.F., West, K.W., Gibson, J.M. Materials Research Society	8 国際会議録 * SILICON ON INSULATOR FORMED BY 0+ OR N+ ION IMPLANTATION Hemment, P.L.F. Materials Research Society
3 国際会議録 The SOI odyssey Hemment, P.L.F. Electrochemical Society	9 国際会議録 New high voltage device structures in SOI based technology Udrea, F., Milne, W.I., Hemment, P.L.F. Electrochemical Society
4 国際会議録 CHARACTERIZATION OF DEVICE GRADE SOI STRUCTURES FORMED BY IMPLANTATION OF HIGH DOSES OXYGEN Hemment, P. L. F., Maydell-Ondrusz, E. A., Stephens, K. G., Arrowsmith, R. P., Glaccum, A> C., Kilner, J. A., Butcher, … North-Holland	10 国際会議録 MONITORING SIMOX LAYER PROPERTIES AND IMPLANTATION TEMPERATURE BY OPTICAL MEASUREMENTS Harbeke, G., Steigneier, E. F., Hemment, P. L. F., Reeson, K. J., Jastrzebski, L. Materials Research Society
5 国際会議録 TEM OBSERVATIONS OF SILICON-ON-INSULATOR STRUCTURES FORMED BY NITROGEN IMPLANTATION WITH ANNEALING AT 1405°C Meekison, C. D., Booker, G. R., Reeson, K. J., Hemment, P. L. F., Celler, G. K. Materials Research Society	11 国際会議録 Structural characterization by RBS and TEM of SiC buried layers formed by ion beam synthesis at high temperature Nejim, A., Hemment, P.L.F., Stoemenos, J. Electrochemical Society
6 国際会議録 EVIDENCE FOR OXYGEN CONCENTRATION CHANGES INDUCED BY LOW-TEMPERATURE 0-18 IMPLANTATION INTO A SIMOX BURIED-OXIDE LAYER Scalon, P. J., Hemment, P. L. F., Robinson, A. K., Reeson, K. J., Chater, R. J., Kilner, J. A., Harbeke, G. Materials Research Society	12 国際会議録 Formation and characterization of double SIMOX structures by sequential high and low energy oxygen implantation into silicon Hatzopoulos, N., Siapkas, D.I., Hemment, P.L.F., Skorupa, W. Electrochemical Society

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