MESOTAXY: GROWTH OF BURIED SINGLE-CRYSTAL CoSi2 LAYERS BY IMPLANTATION

MESOTAXY: GROWTH OF BURIED SINGLE-CRYSTAL CoSi2 LAYERS BY IMPLANTATION

著者名:

掲載資料名:

Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

74

発行年:

1987

開始ページ:

481

終了ページ:

486

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837401 [0931837405]

言語:

英語

請求記号:

M23500/74

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015559
シリーズID:	PA00000011
会議名:	Symposium on beam-solid interactions and transient processes
回次:	1986
会議開催地:	Boston, MA, USA
会議開催年:	1986.12.01-1986.12.04

類似資料:

1 国際会議録 MESOTAXY: SINGLE-CRYSTAL GROWTH OF BURIED SILICIDE LAYERS White, Alice E.., Short, K.. T., Dynes, R. C., Garno, J. P., Gibson, J. M. Materials Research Society	7 国際会議録 TUNNEL JUNCTIONS ON CHEMICALLY ETCHED YBa2Cu3O7 THIN FILMS Phillips, Julia M., Valles, Jr., J.M., Cucolo, A.M., Dynes, R.C., Gurvitch, M., Garno, J.P., Marshall, J.H. Materials Research Society
2 国際会議録 *SYNTHESIS OF BURIED SILICON COMPOUNDS USING ION IMPLANTATION White, Alice E., Short, K. T., Dynes, R. C., Gibson, J. M., Hull. R. Materials Research Society	8 国際会議録 THE ROLE OF IMPLANT TEMPERATURE IN THE FORMATION OF THIN BURIED OXIDE LAYERS White, Alice E., Short, K.T., Pfeiffer, L.N., West, K.W., Batstone, J.L. Materials Research Society
3 国際会議録 ELECTRON TUNNELING INTO SINGLE CRYSTALS OF YBa2Cu3O7-δ Valles, Jr., J.M., Gurvitch, M., Cucolo, M., Dynes, R.C., Garno, J.P., Schneemeyer, L.F., Wasczcak, J.V. Materials Research Society	9 国際会議録 GROWTH OF CoSi2/Si MULTILAYER STRUCTURES Lin, T.L., Grunthaner, P.J., Schowengerdt, F.D., Fathauer, R.W., Mazur, J.H., Chang, K.T., Hashimoto, S., Xiao, Q. Materials Research Society
4 国際会議録 *SYNTHESIS OF BURIED SILICON COMPOUNDS USING ION IMPLANTATION White, A. E., Short, K. T., Dynes, R. C., Gibson, J. M., Hull, R. Materials Research Society	10 国際会議録 MICROSTRUCTURAL CHARACTERIZATION OF HIGH DOSE OXYGEN IMPLANTED SILICON Batstone, J.L., White, Alice E., Short, K..T., Gibson, J.M., Jacobson, D.C. Materials Research Society
5 国際会議録 MESO-EPITAXY: EPITAXIAL GROWTH OF SILICON OVER BURIED SINGLE CRYSTAL CoSi2 LAYERS Osenback, J. W., White, A. E., Short, K. T., Praefcke, H. C., Kannon, V C. Materials Research Society	11 国際会議録 FORMATION OF BURIED TiSi2 LAYERS IN SINGLE CRYSTAL SILICON BY ION IMPLANTATION Madakson, P., Clark, G. J., Legoues, F. K., d'Heurle, F. M., Baglin, J. E. E. Materials Research Society
6 国際会議録 MESOTAXY LAYERS OF IrSi3 IN (111)Si FORMED BY MeV ION IMPLANTATION Short, K. T., White, Alice E., Eaglesham, D. J., Jacobson, D. C., Poate, J. M. Materials Research Society	12 国際会議録 THE GROWTH OF EPITAXIAL NiSi2 SINGLE CRYSTALS ON SILICON BY THE USE OF TEMPLATE LAYERS Teng, R. T., Gibson, J. M., Poate, J. M. North-Holland

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