TRANSIENT ENHANCED DIFFUSION IN B+ AND P+ IMPLANTED SILICON

TRANSIENT ENHANCED DIFFUSION IN B+ AND P+ IMPLANTED SILICON

著者名:

掲載資料名:

Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

74

発行年:

1987

開始ページ:

379

終了ページ:

384

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837401 [0931837405]

言語:

英語

請求記号:

M23500/74

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015559
シリーズID:	PA00000011
会議名:	Symposium on beam-solid interactions and transient processes
回次:	1986
会議開催地:	Boston, MA, USA
会議開催年:	1986.12.01-1986.12.04

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2 国際会議録 TRAPPING OF INTERSTITIALS DURING ION IMPLANTATION IN SILICON Culbertson, R.J., Pennycook, S.J. Materials Research Society	8 国際会議録 Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon Cowern, N.E.B., Mannino, G., Roozeboom, F., Stalk, P.A., Huizing, H.G.A., van Berkum, J.G.M, Toan, N.N., Woerlee, P.H., … Electrochemical Society
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