AMORPHIZATION OF SILICON BY BORON ION IMPLANTATION

AMORPHIZATION OF SILICON BY BORON ION IMPLANTATION

著者名:

掲載資料名:

Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

71

発行年:

1986

開始ページ:

203

終了ページ:

210

総ページ数:

8

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837371 [0931837375]

言語:

英語

請求記号:

M23500/71

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015557
シリーズID:	PA00000011
会議名:	Symposium on materials issues in silicon integrated circuit processing
回次:	1986
会議開催地:	Palo Alto, CA, USA
会議開催年:	1986.04.15-1986.04.18

類似資料:

1 国際会議録 THE FORMATION OF AMORPHOUS SILICON BY LIGHT ION DAMAGE Shih, Y., Washburn, J., Weber, E. R., Gronsky, R. Materials Research Society	7 国際会議録 The Influence of Amorphizing Implants on Boron Diffusion in Silicon Chao, H. S., Griffin, P. B., Plummer, J. D. MRS - Materials Research Society
2 国際会議録 MEGAVOLT BORON AND ARSENIC IMPLANTATION INTO SILICON Bryne, P. F., Cheung, N. W., Tam, S., Hu, C., Shih, Y. C., Washburn, J., Starthman, M. North-Holland	8 国際会議録 OBSERVATION OF STOICHIOMETRY CHANGES BENEATH METAL CONTACTS 0N GaAs. LILIENTAL-WEBER,Z., WEBER,E.R., NEWMAN,N., SPICER,W.E., GRONSKY,R., WASHBURN,J. Trans Tech Publications
3 国際会議録 Structural and Photoluminescence Studies of Er-Implanted LT-GaAs:Be Maltez, R. L., Liliental-Weber, Z., Washburn, J., Behar, M., Klein, P. B., Specht, P., Weber, E. R. MRS - Materials Research Society	9 国際会議録 THE STRUCTURE AND ELECTRICAL PROPERTIES OF Au CONTACTS TO GaAs Liliental-Weber, Z., Newman, N., Spicer, W.E., Gronsky, P., Washburn, J., Weber, E.R. Materials Research Society
4 国際会議録 A CRITICAL REGIME FOR AMORPHIZATION OF ION IMPLANTED SILICON Goldberg, R. D., Williams, J. S., Elliman, R. G. MRS - Materials Research Society	10 国際会議録 Diffusion of Ion-Implanted Boron and Silicon in Germanium Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G. Materials Research Society
5 国際会議録 A critical regime for amorphization of ion implanted silicon Goldberg, R. D., Williams, J. S., Elliman, R. G. MRS - Materials Research Society	11 国際会議録 THE STRUCTURE OF A1/GaAs INTERFACES Liliental-Weber, Zuzanna, Nelson, C., Gronsky, R., Washburn, J., Ludeke, R. Materials Research Society
6 国際会議録 Formation and effects of secondary defects in ion implanted silicon Washburn, Jack North Holland	12 国際会議録 THIN FILM Ag/YBCO MULTISTRUCTURES FOR METAL CONTACT APPLICATIONS Powers, M., Gronsky, R., Washburn, J. Materials Research Society

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