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DEFECT STRUCTURES GENERATED BY BURIED AMORPHOUS LAYER REGROWTH IN <10> ARSENIC IMPLANTED SILICON

著者名:
掲載資料名:
Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
71
発行年:
1986
開始ページ:
173
終了ページ:
178
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837371 [0931837375]
言語:
英語
請求記号:
M23500/71
資料種別:
国際会議録

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