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APPLICATION OF THE SILICON INTERSTITIAL BASED INTRINSIC GETTERING PROCESS TO THE FORMATION OF MULTILEVEL DEFECT STRUCTURES

著者名:
Nauka, K.  
掲載資料名:
Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
71
発行年:
1986
開始ページ:
27
終了ページ:
32
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837371 [0931837375]
言語:
英語
請求記号:
M23500/71
資料種別:
国際会議録

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