EPITAXIAL CRYSTALLIZATION OF Ge ON Si USING EVAPORATION AND RECRYSTALLIZATION TECHNIQUES

EPITAXIAL CRYSTALLIZATION OF Ge ON Si USING EVAPORATION AND RECRYSTALLIZATION TECHNIQUES

著者名:

掲載資料名:

Heteroepitaxy on silicon : symposium held April 16-18, 1986, Palo Alto, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

67

発行年:

1986

開始ページ:

259

終了ページ:

268

総ページ数:

10

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837333 [0931837332]

言語:

英語

請求記号:

M23500/67

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015553
シリーズID:	PA00000011
会議名:	Symposium on heteroepitaxy on silicon
回次:	1986
会議開催地:	Palo Alto, CA, USA
会議開催年:	1986.04.16-1986.04.18

類似資料:

1 国際会議録 MATERIAL CHARACTERIZATION OF EPITAXIAL GAAS AND Ge FILMS ON (100) Si SUBSTRATES AddulAwal M., Lee, El Hang, Koos, G.L., Chan, E.Y., Celler, G.k., Sheng, T.T. Materials Research Society	7 国際会議録 Laser induced diffusion of radioactive As into Si Pfeiffer, Loren, Kovacs, T., Celler, G.K., Trimble, L.E., Jacobson, D.C. North Holland
2 国際会議録 Laser crystallization of deposited silicon films Celler, G.K., Jeamy, H.J., Aspnes, D.E., Doherty, C.J., Sheng, T.T., Trimble, L.E. North Holland	8 国際会議録 Sub-boundary formation and suppression in silicon films recrystallized by scanned zone melting Pfeiffer, L., Gibson, J. M., Kovacs, T. North-Holland
3 国際会議録 CHARACTERISTIC COMPARISON BETWEEN Ge-ON-INSULATOR (GOI) AND Si-ON-INSULATOR (SOI) BEAM-INDUCED CRYSTALLIZATION MECHANISM Lee, El-Hang, Abdul Awal, M. Materials Research Society	9 国際会議録 *ARSENIC IN Si02 - PHASE SEGREGATION, DRIFT, AND DIFFUSION PHENOMENA Celler, G. K., Trimble, L. E., Sheng, T. T., West, K. W., Konsinski, S. G., Pfeiffer, L. Materials Research Society
4 国際会議録 COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY … Awal, Abdul M., Lee, E. H., Chan, E. Y., Lum R. M., Klingert, J. K., Sheng, T. T., Hopkins, L. C., Opila, R. L. Materials Research Society	10 国際会議録 DRIFT OF ARSENIC IN SiO2 IN A LAMP FURNACE WITH A BUILT-N TEMPERATURE GRADIENT Celler, G. K., Trimble, L. E., West, K. W., Pfeiffer, L., Sheng,, T. T. Materials Research Society
5 国際会議録 CAPPING TECHNIQUES FOR ZONE-MELTING-RECRYSTALLIZED Si-ON-INSULATOR FILMS Chen, C.K., Pfeiffer, L., West, K.W., Geis, M.W., Darack, S., Achaibar, G., Mountain, R.W., Tsaur, B-Y. Materials Research Society	11 国際会議録 Antireflection Layer Coatings on the Si Solar Cell Using SiO2 and Si3N4 Chang, G.K. Trans Tech Publications
6 国際会議録 THE EFFECT OF RAPID THERMAL TREATMENT ON THE STRUCTURAL OPTOELECTRONIC PROPERTIES OF EPITAXIAL GaAs ON Si GROWN WITH OR WITHOUT Ge INTERMEDIATE LAYERS Lee, El-Hang, Awal, Abdul M., Chan, E. Y., Opila, R. L., Jacobson, D. C., Pearton,. S. J. Materials Research Society	12 国際会議録 IMPROVEMENTS IN ZONE MELT RECRYSTALLIZED SOI LAYERS BY THE USE OF SELECTIVE EPITAXIAL GROWTH IN THE SEED WINDOWS Williams, D. A., McMAhon, R. A., Ahmed, H., Karapiperis, L., garry, G., Dieumegard, D., Barfoot, K. M., Godfrey, D. J. Materials Research Society

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