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TRAPPING OF OXYGEN AT HOMOEPITAXIAL Si/Si INTERFACES GROWTH BY MODULAR BEAM EPITAXY

著者名:
掲載資料名:
Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
59
発行年:
1986
開始ページ:
317
終了ページ:
322
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837241 [0931837243]
言語:
英語
請求記号:
M23500/59
資料種別:
国際会議録

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