NUCLEATION AND GROWTH OF OCTAHEDRAL OXIDE PARTICLES IN SILICON: OXYGEN ION IMPLANTATION
- 著者名:
- 掲載資料名:
- Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 59
- 発行年:
- 1986
- 開始ページ:
- 309
- 終了ページ:
- 316
- 総ページ数:
- 8
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837241 [0931837243]
- 言語:
- 英語
- 請求記号:
- M23500/59
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Electrochemical Society |
Materials Research Society |
Materials Research Society |
North Holland |
Materials Research Society |
Materials Research Society |
10
国際会議録
GRAIN GROWTH PROCESSES DURING TRANSIENT ANNEALING OF As-IMPLANTED, POLYCRYSTALLINE-SILICON FILMS
Materials Research Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Trans Tech Publications |