EFFECTS OF THERMAL DONOR GENERATION AND ANNIHILATION UPON OXYGEN PRECIPITATION

EFFECTS OF THERMAL DONOR GENERATION AND ANNIHILATION UPON OXYGEN PRECIPITATION

著者名:

掲載資料名:

Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

59

発行年:

1986

開始ページ:

287

終了ページ:

292

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837241 [0931837243]

言語:

英語

請求記号:

M23500/59

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015545
シリーズID:	PA00000011
会議名:	Symposium on oxygen, carbon, hydrogen, and nitrogen in crystalline silicon
回次:	1985
会議開催地:	Boston, MA, USA
会議開催年:	1985.12.02-1985.12.05

類似資料:

1 国際会議録 EFFECTS OF 450｡？THERMAL ANNEALING UPON OXYGEN PRECIPITATION IN B-DOPED CZ Si WAFERS. HAHN,S., SHATAS,S., STEIN,H.J., ARST,M., SADANA,D.K., REK,Z.U., STOJANOFF,V. Trans Tech Publications	7 国際会議録 OXYGEN ENDOR OF THERMAL DONORS IN SILICON. WEZEP,D.A.VAN, GREGORKIEWICZ,T., BEKMAN,H.H.P.Th., AMMERLAAN,C.A.J. Trans Tech Publications
2 国際会議録 SELECTIVE HYDROGEN PASSIVATION OF OXYGEN-RELATED THERMAL-DONOR CLUSTERS IN SILICON. JOHNSON,N.M., HAHN,S.K., STEIN,H.J. Trans Tech Publications	8 国際会議録 NEW OPTICAL TRANSITION AT THERMAL DONORS IN SILICON Weber, J., Queisser, H.J. Materials Research Society
3 国際会議録 Depth profiles for hydrogen-assisted thermal donor formation in silicon Stein,H.J., Hahn,S., Richards,P.M. Trans Tech Publications	9 国際会議録 FORMATION OF A LOW THERMAL DONORS CONCENTRATION LAYEER IN Cz Si WAFER DURING 450 C/64hr ANNEALING Hahn, S. Materials Research Society
4 国際会議録 EFFECTS OF CARBON CONCENTRATION UPON OXYGEN PRECIPITATION IN CZ Si Hahn, S., Arst, M., Ritz, K. N., Shatas, S., Stein, H. J., Rek, Z. U., Tiller, W. A. Materials Research Society	10 国際会議録 Influence of Rapid Thermal Annealing on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Takeno, H., Aihara, K., Hayamizu, Y., Masui, T., Suezawa, M. Electrochemical Society
5 国際会議録 THERMAL DONOR REMOVAL BY RAPID THERMAL ANNEALING: INFRARED ABSORPTION Stein, H. J., Hahn, S. K., Shatas, S. Materials Research Society	11 国際会議録 ON THE QUESTION OF OXYGEN DIFFUSION DURING OXYGEN RELATED THERMAL DONOR FORMATION IN SILICON Oehrlein, G.S., Tan, T.Y., Kleinhenz, R.L., Lindstrom, J.L. Materials Research Society
6 国際会議録 OXYGEN PRECIPITATION AND THERMAL DONORS IN SILICON Newman, Ronald C. Materials Research Society	12 国際会議録 OXYGEN PRECIPITATION IN SILICON - ITS EFFECTS ON MINORITY CARRIER RECOMBINATION AND GENERATION LIFETIME Varker, C. J., Whitfield, J. C., Fejes, P. L. North-Holland

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