DIRECT OBSERVATION OF INTERFACE TRAPS IN OMVPE-GROWTH SELECTIVELY DOPED A1GaAs/GaAs HETEROSTRUCTURE USING MODIFIED DLTS

DIRECT OBSERVATION OF INTERFACE TRAPS IN OMVPE-GROWTH SELECTIVELY DOPED A1GaAs/GaAs HETEROSTRUCTURE USING MODIFIED DLTS

著者名:

掲載資料名:

Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

56

発行年:

1985

開始ページ:

295

終了ページ:

300

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837210 [0931837219]

言語:

英語

請求記号:

M23500/56

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015542
シリーズID:	PA00000011
会議名:	Symposium on layered structures and epitaxy
回次:	1985
会議開催地:	Boston, MA, USA
会議開催年:	1985.12.02-1985.12.04

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