Blank Cover Image

DEPOSITION OF THIN INSULATING FILMS BY PLASMA ENHANCED CVD

著者名:
掲載資料名:
Thin films : interfaces and phenomena : symposium held December 2-6, 1985, Boston, Massachusetts, USA
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
54
発行年:
1985
開始ページ:
529
終了ページ:
534
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837197 [0931837197]
言語:
英語
請求記号:
M23500/54
資料種別:
国際会議録

類似資料:

1 国際会議録 DEPOSITION OF DIELECTRIC FILMS BY REMOTE PLASMA ENHANCED CVD

Lucovsky G., Tsu, D.V., Markunas R.J.

Materials Research Society
7 国際会議録 DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE Si,C ALLOY THIN FILMS BY A REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS

Wang, C., Lucovsky, G., Nemanich, R.J.

Materials Research Society
2 国際会議録 THE GROWTH OF SILICON OXIDE FILMS BY REMOTE PLASMA ENHANCED CVD

Tsu, D.V., Lucovsky, G.

Materials Research Society
8 国際会議録 DEPOSITION OF HEAVILY-DOPED μc-SILICON THIN FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION PROCESS (remote PECVD)

Wang, C:, Bjorkman, C.H., Lee, D.R., Williams, M.J., Lucovsky, G.

Materials Research Society
3 国際会議録 BONDED HYDROGEN IN SILICON OXIDE THIN FILMS DEPOSITED BY REMOT PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Tsu, D. V., Lucovsky, G.

Materials Research Society
9 国際会議録 Deposition of Device-Quality Dielectric Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition (RPECVD) and Rapid Thermal Annealing (RTA)

Lucovsky, G., Lu, Z., Lee, D.R.

American Institute of Chemical Engineers
4 国際会議録 GROWTH OF a-Si:H FILMS BY REMOTE PLASMA ENHANCED CVD (RPECVD)

Parsons, G.N., Tsu, D.V., Lucovsky, G.

Materials Research Society
10 国際会議録 *THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
5 国際会議録 CHEMICAL REACTION PATHWAYS FOR THE DEPOSITION OF AMORPHOUS SILICON-HYDROGEN ALLOYS BY REMOTE PLASMA ENHANCED CVD

Parsons, G.N., Tsu, D.V., Lucovsky, G.

Materials Research Society
11 国際会議録 THE ELECTRICAL PROPERTIES OF SILICON OXIDE DEPOSITED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (RPECVD)

Kim, Sang S., Tsu, D. V., Lucovsky, G.

Materials Research Society
6 国際会議録 STUDIES OF SiH2Cl2/H2 GAS PHASE CHEMISTRY FOR SELECTIVE THIN FILM GROWTH OF CRYSTALLINE SILICON, c-Si, USING REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION

Theil, J.A., Lucovsky, G., Hattangady, S.V., Fountain, G.G., Markunas, R.J.

Materials Research Society
12 国際会議録 *CONTROL OF BONDED SiH IN SILICON OXIDES DEPOSITED BY REMOTE PLASMA ENHANCED CVD

Tsu, D. V., Parsons, G. N., Lucovsky, G., Watkins, M. W.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12