THE EFFECTS OF ANNEALING TEMPERATURE ON THE CEARACTERISTICS OF BURIED OXIDE SILICON-ON-INSULATOR
- 著者名:
- 掲載資料名:
- Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 53
- 発行年:
- 1985
- 開始ページ:
- 251
- 終了ページ:
- 256
- 総ページ数:
- 6
- 出版情報:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837180 [0931837189]
- 言語:
- 英語
- 請求記号:
- M23500/53
- 資料種別:
- 国際会議録
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