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FORMATION OP BURIED Si02 BY HIGH DOSE IMPLANTATION OF OXYGEN AT RODM AND LIQUID NITROGEN TEMPERATURES

著者名:
掲載資料名:
Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
53
発行年:
1985
開始ページ:
233
終了ページ:
238
総ページ数:
6
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837180 [0931837189]
言語:
英語
請求記号:
M23500/53
資料種別:
国際会議録

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