ION BEAM DEPOSITION OF MATERIALS AT 40-200 eV: EFFECT OF ION ENERGY AND SUBSTRATE TEMPERATURE ON INTERFACE, THIN FILM AND DAMAGE FORMATION

ION BEAM DEPOSITION OF MATERIALS AT 40-200 eV: EFFECT OF ION ENERGY AND SUBSTRATE TEMPERATURE ON INTERFACE, THIN FILM AND DAMAGE FORMATION

著者名:

掲載資料名:

Beam-solid interactions and phase transformations : symposium held December 2-4, 1985, Boston, Massachusetts, USA

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

51

発行年:

1985

開始ページ:

369

終了ページ:

374

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837166 [0931837162]

言語:

英語

請求記号:

M23500/51

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015537
シリーズID:	PA00000011
会議名:	Symposium on beam-solid interactions and phase transformations
回次:	1985
会議開催地:	Boston, MA, USA
会議開催年:	1985.12.02-1985.12.04

類似資料:

1 国際会議録 *INVESTIGATIONS OF LOW-TEMPERATURE EPITAXY, ION DAMAGE, AND REACTIVE-ION CLEANING UTILIZING ION BEAM DEPOSITION Appleton, B.R., Zuhr, R.A., Noggle, T.S., Herbots, N., Pennycook, S.J. Materials Research Society	7 国際会議録 COHERENT PRECIPITATE FORMATION IN PULSED-LASER AND THERMALLY ANNEALED, ION-IMPLANTED Si Appleton, B. R.., Narayan, J., Holland,. O, W.,, Pennycook, S. J. North-Holland
2 国際会議録 *INVESTIGATIONS OF LOW-TEMPERATURE EPITAXY, ION DAMAGE, AND REACTIVE-ION CLEANING UTILIZING ION BEAM DEPOSITIOIN Appleton, B.R., Zuhr, R.A., Noggle, T.S., Herbots, N., Pennycook, S.J. Materials Research Society	8 国際会議録 DAMAGE TO CRYSTALLINE SILICON FOLLOWING IMPLANTATION BY LOW ENERGY SILICON IONS Levin, Y., Herbots, N, Dunham, S. Materials Research Society
3 国際会議録 *DIRECT FORMATION OF THIN FILMS AND EPITAXIAL OVERLAYERS AT LOW TEMPERATURES USING A LOW-ENERGY (10-500 eV) ION BEAM DEPOSITION SYSTEM Zuhr, R. A, Alton, G. D., Appleton, B. R., Herbots, N., Noggle, T. S., Pennycook, S. J. Materials Research Society	9 国際会議録 ION BEAM, RAPID THERMAL, AND LASER MIXING PHENIMENA IN INSULATORS Narayan,J., Appleton, B.R. Materials Research Society
4 国際会議録 METAL SILICIDES FORMED BY DIRECT ION BEAM DEPOSITION Zuhr, R.A., Pennycook, S.J., Haynes, T.E., Holland, O.W. Materials Research Society	10 国際会議録 FORMATION OF STABLE POINT DEFECTS IN ION-IMPLANTED Si Culbertson, R.J., Pennycook, S.J. Materials Research Society
5 国際会議録 HETEROEPITAXY ON GaAs ON Si AND Ge BY LOW-ENERGY ION BEAM DEPOSITION USING ALTERNATING BEAMS Haynes, T. E., Zuhr, R. A., Pennycook, S. J,. Materials Research Society	11 国際会議録 Ion channeling techniques for defect and surface studies Appleton, B.R. North Holland
6 国際会議録 GROWTH OF EPITAXIAL SiC LAYERS ONTO ON- AND OFF-AXIS 6H-SiC SUBSTRATES BY ION BEAM DEPOSITION More, K.L., Withrow, S.P., Haynes, T.E., Zuhr, R.A. Materials Research Society	12 国際会議録 *EPITAXY AND CHEMICAL REACTIONS DURING THIN FILM FORMATION FROM LOW ENERGY IONS: NEW KINETIC PATHWAYS, NEW PHASES, AND NEW PROPERTIES Herbots, Nicole, Hellman, O. C., Vancauwenberghe, O. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12