DEEP LEVELS ASSOCIATED WITH OXYGEN PRECIPITATION IN CZ SILICON AND CORRELATION WITH MINORITY CARRIER LIFETIMES

DEEP LEVELS ASSOCIATED WITH OXYGEN PRECIPITATION IN CZ SILICON AND CORRELATION WITH MINORITY CARRIER LIFETIMES

著者名:

掲載資料名:

Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

46

発行年:

1985

開始ページ:

281

終了ページ:

286

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837111 [0931837111]

言語:

英語

請求記号:

M23500/46

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015529
シリーズID:	PA00000011
会議名:	Symposium on microscopic identification of electronic defects in semiconductors
回次:	1985
会議開催地:	San Francisco, CA, USA
会議開催年:	1985.04.15-1985.04.18

類似資料:

1 国際会議録 OXYGEN PRECIPITATION IN SILICON - ITS EFFECTS ON MINORITY CARRIER RECOMBINATION AND GENERATION LIFETIME Varker, C. J., Whitfield, J. C., Fejes, P. L. North-Holland	7 国際会議録 Influence of Oxygen and Oxygen Related Defects on the Minority Carrier Lifetime of High Purity CZ and MCZ Silicon Porrini, M., Gambaro, D., Geranzani, P., Falster, R. Electrochemical Society
2 国際会議録 STRUCTURAL AND CHEMICAL MICROANALYSIS OF OXYGEN-BEARING PRECIPITATES IN SILICON Carpenter, R. W., Chan, I, Tsi, H. I, Varker, C., Demer, L. J. North-Holland	8 国際会議録 Minority Carrier Lifetime and Impurity Level Scan Map in Silicon Palais, O., Yakimov, E., Simon, J.J., Martinuzzi, S. Electrochemical Society
3 国際会議録 Relation Between Oxygen Precipitation and Minority Carrier Lifetime in Cz-Si Crystal Lee, B.-Y., Park, B.-M., Hwang, D.-H., Kwon, O-J. Electrochemical Society	9 国際会議録 Minority Carrier Lifetime and Impurity Level Scan Map in Silicon Palais,O., Yakimov,E., Simon,J.J., Martinuzzi,S. Electrochemical Society, SPIE-The International Society for Optical Engineering
4 国際会議録 DISPLACEMENT OF ARSENIC FROM SUBSTITUTIONAL SITES IN SILICON BY MeV He+ IRRADIATION Varker, C. J., Wilson, S. R., Chan, S. S., Whitfield, J. D., Krause, S. J Materials Research Society	10 国際会議録 DEEP-LEVELS ASSOCIATED WITH IMPLATED TITANIUM IN SILICON Ransom, C.M., Iyer, S.S. Materials Research Society
5 国際会議録 PRECIPITATE MORPHOLOGIES IN OXYGEN-ION IMPLANTED SILICON:A HIGH RESOLUTION ELECTRON MICROSCOPY STUDY. VANDERSCHAEVE,G., CARPENTER,R.W., BARRY,J.C., VARKER,C.J., WILSON,S.R. Trans Tech Publications	11 国際会議録 Effective Lifetime of Minority Carriers in Silicon: the Role of Heat- and Hydrogen Plasma Treatments Ulyashin, A., Simoen, E., Camel, L., De Wolf, S., Dekkers, H., Rafi, J.M., Beaucarne, G., Poortmans, J., Claeys, C. Electrochemical Society
6 国際会議録 INFRARED MAPPING OF OXYGEN AND CORRELATION WITH ELECTRICAL MEASUREMENTS ON CZ GROWN WAFERS Whitfield, J., Boyle, R. Materials Research Society	12 国際会議録 OPTIMISATION OF THE HETEROEPITAXY OF Ge ON GaAs FOR MINORITY-CARRIER LIFETIME Venkatasubramanian, R., Timmons, M. L., Bothra, S., Borrego, J. M. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12