INTERNAL GETTERING IN OXYGEN-FREE SILICON

INTERNAL GETTERING IN OXYGEN-FREE SILICON

著者名:

掲載資料名:

Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

36

発行年:

1985

開始ページ:

175

終了ページ:

180

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837012 [0931837014]

言語:

英語

請求記号:

M23500/36

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015522
シリーズID:	PA00000011
会議名:	Symposium on impurity diffusion and gettering in silicon
回次:	1984
会議開催地:	Boston, MA, USA
会議開催年:	1984.11.26-1984.11.30

類似資料:

1 国際会議録 NATURE AND GENERATION MECHANISM OF BUTTERFLY-TYPE INTRINSIC GETTERING CENTERS IN OXYGEN-FREE SILICON CRYSTALS. UEDA,O., NAUKA,K., LAGOWSKI,J., GATOS,H.C. Trans Tech Publications	7 国際会議録 APPLICATION OF THE SILICON INTERSTITIAL BASED INTRINSIC GETTERING PROCESS TO THE FORMATION OF MULTILEVEL DEFECT STRUCTURES Nauka, K. Materials Research Society
2 国際会議録 SCATTERING OF FREE CARRIERS BY OXYGEN PRECIPITATES IN CZOCHRALSKI-GROWN SILICON Nauka, K., Walukiewicz, W., Lagowski, J., Gatos, H. C. Materials Research Society	8 国際会議録 Space Charge Layers Gatos C. H., Lagowski Jacek Noordhoof International Publishing
3 国際会議録 CORRELATION OF OXYGEN AND RECOMBINATION CENTERS ON A MICROSCALE IN Aa-GROWN CZOCHRALSKI SILICON CRYSTALS Nauka, K., Gatos, H. C., Lagowski, J. North-Holland	9 国際会議録 HIGH RESOLUTION OPTICAL STUDY OF THE ANTISITE DEFECT AsGa IN GaAs, CORRELATION WITH MIDGAP LEVEL EL2 Skowronski, M., Lin, D. G., Lagowski, J., Pawlowicz, L..M., Ko, K. Y., Gatos, H. C. Materials Research Society
4 国際会議録 ON THE MECHANISM OF INTRINSIC GETTERING BY BUTTERFLY-TYPE DEFECTS IN SILICON Ueda, O., Nauka, K., Lagowski, J., Gatos, H.C. Materials Research Society	10 テクニカルペーパー DEFECT INTERACTIONS IN GaAs SINGLE CRYSTALS Gatos, H. C., Lagowski, J. National Aeronautics and Space Administration
5 国際会議録 MICROSCOPIC ANALYSIS OF THE BEHAVIOR OF INTERSTITIAL AND PRECIPITATED OXYGEN DURING INTRINSIC GETTERING IN Si Sun, Q., Lagowski, J., Gatos, H. C. Materials Research Society	11 国際会議録 EBIC SPECTROSCOPY - A NEW APPROACH TO MICROSCALE CHARACTERIZATION OF DEEP LEVELS IN SEMI-INSULATING GaAs L:I, C.-J., Sun, Q., Lagowski, J., Gatos, H. C. Materials Research Society
6 国際会議録 *EL2 AND RELATED DEFECTS IN GaAs--CHALLENGES AND PITFALLS Gatos, H. C., Lagowski, J. Materials Research Society	12 国際会議録 Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers Sueoka,K., Akatsuka,M., Onno,T., Asayama,E., Koike,Y., Adachi,N., Sadamitsu,S., Katahama,H. Electrochemical Society, SPIE-The International Society for Optical Engineering

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