PULSED-CO2-LASER ANNEALING OF ION-IMPLANTED SILICON

PULSED-CO2-LASER ANNEALING OF ION-IMPLANTED SILICON

著者名:

Jamas, R. B.

掲載資料名:

Energy beam-solid interactions and transient thermal processing/1984 : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

35

発行年:

1985

開始ページ:

413

終了ページ:

418

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837005 [0931837006]

言語:

英語

請求記号:

M23500/35

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015521
シリーズID:	PA00000011
会議名:	Symposium on energy beam-solid interactions and transient thermal processing
回次:	1984
会議開催地:	Boston, MA, USA
会議開催年:	1984.11.26-1984.11.30

類似資料:

1 国際会議録 PULSED EXCIMER LASER (308 nm) ANNEALING OF ION IMPLANTED SILICON AND SOLAR CELL FABRICATION Lowndes, D. H., Cleland, J., W., Christie, W. H., Eby, R. E., Jellison Jr., G. E, Narayan, J., Westbrook, R. D., Wood, … North-Holland	7 国際会議録 SOLID-PHASE-EPITAXIAL GROWTH OF ION IMPLANTED SILICON USING CW LASER AND ELECTRON BEAM ANNEALING Narayan, J., Holland, O. W., Olson, g. L. North-Holland
2 国際会議録 PULSED LASER ANNEALING OF ION IMPLANTED Ge Holland,. O, W.,, Narayan, J., White, C. W., Appleton, B. R. North-Holland	8 国際会議録 Melting and laser annealing in semiconductors using 0.485 mu m and 0.193 mu m pulsed lasers Narayan, J., Fletcher, J., Eby, R.E. North Holland
3 国際会議録 COHERENT PRECIPITATE FORMATION IN PULSED-LASER AND THERMALLY ANNEALED, ION-IMPLANTED Si Appleton, B. R.., Narayan, J., Holland,. O, W.,, Pennycook, S. J. North-Holland	9 国際会議録 FLAME ANNEALING OF ION IMPLANTED SILICON Narayan, J., Young, R. T. North-Holland
4 国際会議録 EFFECT OF PULSE DURATION ON THE ANNEALING OF ION IMPLANTED SILICON WITH A XeC1 EXCIMER LASER AND SOLAR CELLS Young, R. T., Narayan, J., Christie, W. H., van der Leeden, G. A., Rothe, D. E., Sandstro, R. L. North-Holland	10 国際会議録 PULSED LASER MELTING OF AMORPHOUS SILICON: TIME-RESOLVED AND POST-IRRADIATION STUDIES Lowndes, D. H., Wood, R. F., White, C. W., Narayan, J. North-Holland
5 国際会議録 Pulsed ruby laser annealing of Zn, Mg, Se and Si ion implants in semiconducting GaAs Lowndes, Douglas H., Cleland, J.W., Christie, W.H., Eby, R.E. North Holland	11 国際会議録 RAPID HEATING OF ION-IMPLANTED SILICON BY HIGH-POWER PULSED MICROWAVE RADIATION James, R.B., Bolton, P.Rl, Alvarez, R.A., Christie, W.H. Materials Research Society
6 国際会議録 Pulsed-laser annealing of ion-implanted GaAs: theory and experiment Wood, R.F., Lowndes, Douglas H., Christie, W.H. North Holland	12 国際会議録 *LASER ANNEALING OF ION IMPLANTED SEMICONDUCTORS Narayan, J. North-Holland

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