*ELECTRONIC DEFECTS IN SILICON AFTER TRANSIENT ISOTHERMAL ANNEALING
- 著者名:
Pensl, G. Schulz, M. Stolz, P. Johnson, N. M. Gibbons, J. F. Hoyt, J. L. - 掲載資料名:
- Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 23
- 発行年:
- 1984
- 開始ページ:
- 347
- 終了ページ:
- 358
- 総ページ数:
- 12
- 出版情報:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444009036 [0444009035]
- 言語:
- 英語
- 請求記号:
- M23500/23
- 資料種別:
- 国際会議録
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