ELECTRONIC PROPERTIES OF GRAIN BOUNDARIES IN GaAs: A STUDY OF ORIENTED BICRYSTALS PREPARED BY EPITAXIAL LATERAL OVERGROWTH
- 著者名:
- Salerno, J. P.
- McClelland, R. W>
- Mavroides, J. G.,
- Fan, J. C. C. ( Lincoln Laboratory, MIT, Lexington, MA; )
- Witt, A. F. ( Department of Materials Science and Engineering, MIT, Cambridge, MA )
- 掲載資料名:
- Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 14
- 発行年:
- 1983
- 開始ページ:
- 375
- 終了ページ:
- 382
- 総ページ数:
- 8
- 出版情報:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444008121 [0444008128]
- 言語:
- 英語
- 請求記号:
- M23500/14
- 資料種別:
- 国際会議録
類似資料:
MRS-Materials Research Society | |
2
国際会議録
Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth
MRS-Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
SPIE - The International Society for Optical Engineering |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
Materials Research Society |
Materials Research Society |