OXYGEN PRECIPITATION IN SILICON - ITS EFFECTS ON MINORITY CARRIER RECOMBINATION AND GENERATION LIFETIME
- 著者名:
- Varker, C. J.
- Whitfield, J. C.
- Fejes, P. L. ( Semiconductor Research and Development Labs. Motorola, Inc. Phoenix, AZ )
- 掲載資料名:
- Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 14
- 発行年:
- 1983
- 開始ページ:
- 187
- 終了ページ:
- 194
- 総ページ数:
- 8
- 出版情報:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444008121 [0444008128]
- 言語:
- 英語
- 請求記号:
- M23500/14
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
Electrochemical Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
SPIE-The International Society for Optical Engineering, Narosa |
5
国際会議録
Effective Lifetime of Minority Carriers in Silicon: the Role of Heat- and Hydrogen Plasma Treatments
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |