CORRELATION OF OXYGEN AND RECOMBINATION CENTERS ON A MICROSCALE IN Aa-GROWN CZOCHRALSKI SILICON CRYSTALS

CORRELATION OF OXYGEN AND RECOMBINATION CENTERS ON A MICROSCALE IN Aa-GROWN CZOCHRALSKI SILICON CRYSTALS

著者名:

Nauka, K.
Gatos, H. C.
Lagowski, J. ( MIT, Gambridge, MA )

掲載資料名:

Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

14

発行年:

1983

開始ページ:

177

終了ページ:

180

総ページ数:

4

出版情報:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008121 [0444008128]

言語:

英語

請求記号:

M23500/14

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015498
シリーズID:	PA00000011
会議名:	Symposium on defects in semiconductors
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1982.11.00

類似資料:

1 国際会議録 SCATTERING OF FREE CARRIERS BY OXYGEN PRECIPITATES IN CZOCHRALSKI-GROWN SILICON Nauka, K., Walukiewicz, W., Lagowski, J., Gatos, H. C. Materials Research Society	7 テクニカルペーパー DEFECT INTERACTIONS IN GaAs SINGLE CRYSTALS Gatos, H. C., Lagowski, J. National Aeronautics and Space Administration
2 国際会議録 NATURE AND GENERATION MECHANISM OF BUTTERFLY-TYPE INTRINSIC GETTERING CENTERS IN OXYGEN-FREE SILICON CRYSTALS. UEDA,O., NAUKA,K., LAGOWSKI,J., GATOS,H.C. Trans Tech Publications	8 国際会議録 HIGH RESOLUTION OPTICAL STUDY OF THE ANTISITE DEFECT AsGa IN GaAs, CORRELATION WITH MIDGAP LEVEL EL2 Skowronski, M., Lin, D. G., Lagowski, J., Pawlowicz, L..M., Ko, K. Y., Gatos, H. C. Materials Research Society
3 国際会議録 INTERNAL GETTERING IN OXYGEN-FREE SILICON Nauka, K., Lagowski, J., Gatos, H. C. Materials Research Society	9 国際会議録 EBIC SPECTROSCOPY - A NEW APPROACH TO MICROSCALE CHARACTERIZATION OF DEEP LEVELS IN SEMI-INSULATING GaAs L:I, C.-J., Sun, Q., Lagowski, J., Gatos, H. C. Materials Research Society
4 国際会議録 ON THE MECHANISM OF INTRINSIC GETTERING BY BUTTERFLY-TYPE DEFECTS IN SILICON Ueda, O., Nauka, K., Lagowski, J., Gatos, H.C. Materials Research Society	10 国際会議録 Space Charge Layers Gatos C. H., Lagowski Jacek Noordhoof International Publishing
5 国際会議録 MICROSCOPIC ANALYSIS OF THE BEHAVIOR OF INTERSTITIAL AND PRECIPITATED OXYGEN DURING INTRINSIC GETTERING IN Si Sun, Q., Lagowski, J., Gatos, H. C. Materials Research Society	11 国際会議録 Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon Reiche,M., Reichel,J. Trans Tech Publications
6 国際会議録 *EL2 AND RELATED DEFECTS IN GaAs--CHALLENGES AND PITFALLS Gatos, H. C., Lagowski, J. Materials Research Society	12 国際会議録 Formation Behaviour of Grown-in Defects in Silicon During Czochralski Crystal Growth Saishoji, T., Nakamura, K., Nakajima, H., Yokoyama, T., Ishikawa, F., Tomioka, J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12