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THERMAL DONOR FORMATION BY THE AGGLOMERATION OF OXYGEN IN SILICON

著者名:
  • Gosele, U. ( Max-Planck Institute of Metal Physics, Stuttgart, West Germany; )
  • Tan,. T. Y. ( IBM, Thomas J. Watson Research Center, Yorktown Heights., NY )
掲載資料名:
Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
14
発行年:
1983
開始ページ:
153
終了ページ:
158
総ページ数:
6
出版情報:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444008121 [0444008128]
言語:
英語
請求記号:
M23500/14
資料種別:
国際会議録

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