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*THE NATURE OF POIND DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURE,

著者名:
Gosele, U.  
掲載資料名:
Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
14
発行年:
1983
開始ページ:
45
終了ページ:
60
総ページ数:
16
出版情報:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444008121 [0444008128]
言語:
英語
請求記号:
M23500/14
資料種別:
国際会議録

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