Space Radiation Effects on Power MOSFET Threshold-Voltage Shift with Dose Rate

Space Radiation Effects on Power MOSFET Threshold-Voltage Shift with Dose Rate

著者名:

掲載資料名:

Proceedings of the ESA Electronic Components Conference, held at the Conference Centre, ESTEC, Noordwijk, the Netherlands, 12-16 November 1990

シリーズ名:

ESA SP

シリーズ巻号:

313

発行年:

1991

開始ページ:

465

終了ページ:

468

総ページ数:

4

出版情報:

Paris: ESA Publications Division

ISSN:

03796566

ISBN:

9789290920946 [9290920947]

言語:

英語

請求記号:

E11690/911401

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015491
シリーズID:	PA00000009
会議名:	ESA Electronic Components Conference
回次:	1990
会議開催地:	Noordwijk, the Netherlands
会議開催年:	1990.11.12-1990.11.16

類似資料:

1 国際会議録 Analog Performance of Dynamic Threshold Voltage SOI MOSFET. J.O. Amaro, P.G. Agopian, J.A. Martino Electrochemical Society	7 国際会議録 Effect of Charge Distribution on Burnout Threshold of Hardened Power MOSFET Salame, C., Pelanchon, F., Mialhe, P., Hoffmann, A., Charles, J.-P., Kerns, S., Kerns, D.V., Adams, L. ESA Publications Division
2 国際会議録 Total dose radiation induced back channel threshold voltage shifts and standby currents of CMOS devices fabricated in Unibond materials Liu, S.T., Jenkins, W., Huhes, H., Auberton-Herve, A.J. Electrochemical Society	8 国際会議録 Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs Lelis, A.J., Habersat, D.B., Lopez, G., McGarrity, J.M., McLean, F.B., Goldsman, N. Trans Tech Publications
3 国際会議録 Simulation of Radiation Effects in MOSFETs Ekbote,S., Tambe,D., Zaman,P., Dangat,H.K., Khare,M., Sinha,P., Rodd,S., Bukhanwala,N., Vasi,J., Sharma,D.K., Das,A. SPIE-The International Society for Optical Engineering, Narosa	9 国際会議録 Radiation Sensitivity of Power MOSFETS Garnier, J., Taster, P. ESA Publications Division
4 国際会議録 Partially depleted SOIt dynamic-threshold MOSFET for low-voltage and microwave applications Dehan, M., Raskin, J.-P., Vanhoenacker, D. Electrochemical Society	10 国際会議録 Neutrons at Ground Level FIT Evaluation by Extrapolating Proton Test Results for Space Environment Touboul, Antoine, Marec, Ronan, Chatry, Christian, Calvel, Philippe, Caussanel, M., Gasiot, Jean, ESA Publication Division
5 国際会議録 Partially Depleted SOI Dynamic Threshold MOSFET for Low-Voltage and Microwave Applications Dehan, M., Vanhoenacker-Janvier, D., Raskin, J.-P. Electrochemical Society	11 国際会議録 Pulsed laser annealing effects in high dose rate silicon implants Williams, J.S., Pogany, A.P., Beanland, D.G., Chivers, D.J., Kenny, M.J., Rose, A., Scott, M.D. North Holland
6 国際会議録 Correlation between electron and proton induced permanent degradation in a COTS optocoupler Germanicus, R., Dusseau, L., Fesquet, I., Gasiot, J., Barde, S., Rolland, G., Ecoffet, R., Mion, O., Barillot, C., … ESA Publications Division	12 国際会議録 Effect of Switching from High to Low Dose Rate on Linear Bipolar Technology Radiation Response Boch, Jerome, Saigne, Frederic, Schrimpf, Ron D., Fleetwood, Dan M., Ducret, Samuel, Dusseau, Laurent, David, … ESA Publication Division

1

2

3

4

5

6

7

8

9

10

11

12