An Improved Model for the Triangular SOI Misalignment Test Structure

An Improved Model for the Triangular SOI Misalignment Test Structure

著者名:

掲載資料名:

Microelectronics technology and devices : SBMICRO 2004 : proceedings of the nineteenth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-03

発行年:

2004

開始ページ:

57

終了ページ:

62

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774161 [1566774160]

言語:

英語

請求記号:

E23400/200403

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015413
シリーズID:	PA00000028
会議名:	SBMICRO ; Symposium on Integrated Circuits and System Design
回次:	19th (2004) ; 17th
会議開催地:	Porto de Galinhas, Brazil
会議開催年:	2004.09.07-2004.09.11

類似資料:

1 国際会議録 An Improved Current Model for Edgeless SOI MOSFETS Giacomini, R., Martino, J.A. Electrochemical Society	7 国際会議録 Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs M. Galeti, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society
2 国際会議録 A Simple Method to Model Nonrectangular-Gate Layout in SOI MOSFETs Giacomini, R., Martino, J. A. Electrochemical Society	8 国際会議録 Influence of Non-Vertical Sidewall on FinFET Threshold Voltage Renato Giacomini, João Antonio Martino Electrochemical Society
3 国際会議録 An Improved Current Model in Saturation for Trapezoidal Finfets G.P. Martins, R.C. Giacomini, J.A. Martino Electrochemical Society	9 国際会議録 A Simple Analytical Model of Graded-Channel SOI nMOSFET Transconductance Gimenez, S.P., Pavanello, M.A., Martino, J.A. Electrochemical Society
4 国際会議録 Non-Vertical Sidewall Angle Influence on Triple-Gate FinFETs Corner Effects R. Giacomini, J. A. Martino Electrochemical Society	10 国際会議録 A Physically-Based Continuous Model for Graded-Channel SOI MOSFET Pavanello, M.A., Ifiiguez, B., Martino, J.A., Flandre, D. Electrochemical Society
5 国際会議録 Sidewall Angle Influence on the FinFET Analog Parameters R. Giacomini, J. A. Martino, M. A. Pavanello Electrochemical Society	11 国際会議録 Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors M. Galeti, J. A. Martino, E. R. Simoen, C. L. Claeys Electrochemical Society
6 国際会議録 Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs M. Galeti, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society	12 国際会議録 Potential of Improved Gain in Operational Transconductance Amplifier Using 0.5 um Graded-Channel SOI NMOSFET for Applications in the Gigahertz Range Gimenez, S. P., Pavanello, M. A., Martino, J. A., Flandre, D. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12