Behavior of Graded Channel SOI Gate-All-Around NMOSFET Devices at High Temperatures

Behavior of Graded Channel SOI Gate-All-Around NMOSFET Devices at High Temperatures

著者名:

掲載資料名:

Microelectronics technology and devices : SBMICRO 2004 : proceedings of the nineteenth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-03

発行年:

2004

開始ページ:

9

終了ページ:

14

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774161 [1566774160]

言語:

英語

請求記号:

E23400/200403

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015413
シリーズID:	PA00000028
会議名:	SBMICRO ; Symposium on Integrated Circuits and System Design
回次:	19th (2004) ; 17th
会議開催地:	Porto de Galinhas, Brazil
会議開催年:	2004.09.07-2004.09.11

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2 国際会議録 Behavior of Graded-Channel Fully Depleted SOI NMOSFET at High Temperatures Galeti, M., Pavanello, M.A., Martino, J.A. Electrochemical Society	8 国際会議録 Linearity Analysis in Double Gate Graded-Channel Soi Devices Applied to 2-Mos Mosfet-C Balanced Structures R.T. Doria, A. Cerdeira, J.-P. Raskin, D. Flandre, M.A. Pavanello Electrochemical Society
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