Dot Pattem Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy.

Dot Pattem Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy.

著者名:

掲載資料名:

State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2005-04

発行年:

2005

開始ページ:

289

終了ページ:

295

総ページ数:

7

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774628 [1566774624]

言語:

英語

請求記号:

E23400/200504

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015409
シリーズID:	PA00000028
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; International Symposium on Processes at the Compound-Semiconductor/Solution Interface ; Meeting of the Electrochemical Society
回次:	42nd ; 2005 ; 207th
会議開催地:	Quebec City, Canada
会議開催年:	2005.05.15-2005.05.20

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