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THEORETICAL INVESTIGATION OF THE INTERFACES BETWEEN HF-BASED HIGH-K DIELECTRICS AND POLY-SI AND METAL GATES

著者名:
SHIRAISHI, K. 1,2,
NAKAYAMA, T. 3
AKASAKA, Y. 4
MlIYAZAKI, S. 5,2,
NAKAOKA, T. 1
OHMORI, K. 2
AHMET, P. 2
TORII, K. 4,8,
WATANABE, H. 6,2
CHIKYOW, T. 2
NARA, Y. 4
YAMADA, K. 7,2
さらに 7 件
掲載資料名:
Semiconductor technology (ISTC 2006) : proceedings of the 5th International Conference on Semiconductor Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2006-03
発行年:
2006
開始ページ:
320
終了ページ:
329
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774376 [1566774373]
言語:
英語
請求記号:
E23400/200603
資料種別:
国際会議録

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