IMPROVED HIGH BREAKDOWN VOLTAGE IN ALGAAS/GAAS HIGH ELECTRON MOBILITY TRANSISTOR BY NATIVE GATE OXIDES

IMPROVED HIGH BREAKDOWN VOLTAGE IN ALGAAS/GAAS HIGH ELECTRON MOBILITY TRANSISTOR BY NATIVE GATE OXIDES

著者名:

掲載資料名:

Semiconductor technology (ISTC 2006) : proceedings of the 5th International Conference on Semiconductor Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2006-03

発行年:

2006

開始ページ:

181

終了ページ:

186

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774376 [1566774373]

言語:

英語

請求記号:

E23400/200603

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015408
シリーズID:	PA00000028
会議名:	International Conference on Semiconductor Technology
回次:	5th
会議開催地:	Shanghai, China
会議開催年:	2006.03.21-2006.03.23

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