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(13.0) 8:00 - 8:10AM- Welcome (13.1) 8:10 - 8:30 AM - Effect of Growth Temperature on Lattice Relaxation during SiGe Growth on Si Substrates

著者名:
掲載資料名:
SiGe: materials, processing, and devices : proceedings of the First international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-07
発行年:
2004
開始ページ:
849
終了ページ:
856
総ページ数:
8
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
言語:
英語
請求記号:
E23400/200407
資料種別:
国際会議録

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