(11.2) 3:40 - 4:00 PM - Formation Mechanism of Ge-on-lnsulator Layers by Ge-condensation Technique

(11.2) 3:40 - 4:00 PM - Formation Mechanism of Ge-on-lnsulator Layers by Ge-condensation Technique

著者名:

掲載資料名:

SiGe: materials, processing, and devices : proceedings of the First international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-07

発行年:

2004

開始ページ:

741

終了ページ:

748

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774208 [1566774209]

言語:

英語

請求記号:

E23400/200407

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015397
シリーズID:	PA00000028
会議名:	SiGe: Materials, Processing, and Devices Symposium ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochemical Society of Japan
回次:	1st ; 206th ; 2004
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

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