(9.4) 11:40 - 12:00 PM - High Ge Content Si/SiGe Heterostructures for Microelectronics and Optoelectronics Purposes | 東京工業大学附属図書館文献データベース

Blank Cover Image

(9.4) 11:40 - 12:00 PM - High Ge Content Si/SiGe Heterostructures for Microelectronics and Optoelectronics Purposes

著者名:

Bogumilowicz, Y.

Damlencourt, J.F.

Billon, T. (CEA-LETI)

さらに 7 件

掲載資料名:

SiGe: materials, processing, and devices : proceedings of the First international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-07

発行年:

2004

開始ページ:

665

終了ページ:

680

総ページ数:

16

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774208 [1566774209]

言語:

英語

請求記号:

E23400/200407

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015397
シリーズID:	PA00000028
会議名:	SiGe: Materials, Processing, and Devices Symposium ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochemical Society of Japan
回次:	1st ; 206th ; 2004
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

類似資料:

1 国際会議録 Reduced Pressure-Chemical Vapor Deposition of Ge Thick Layers on Si(001) for Microelectronics and Optoelectronics Purposes Hartmann, J.M., Papon, A.M., Holliger, P., Rolland, G., Billon, T., Rouviere, M., Vivien, L., Laval, S. Materials Research Society	7 国際会議録 In-Situ HCl Etching and Selective Epitaxial Growth of B-doped Ge for the Formation of Recessed and Raised Sources and Drains J. Hartmann, A. Papon, J.M. Fabbri, G. Rolland, T. Billon Electrochemical Society
2 国際会議録 Wet-Cleaning and Surface Characterization of Si₁₋xGex Relaxed Alloys (x=0.2-0.5) After Polishing: Applications for SGOI and Strained Silicon Structures … A. Abbadie, J. M. Hartmann, P. Besson, D. Rouchon, P. Holliger, C. Di Nardo, T. Lardin, Y. Campidelli, B. Ghyselen, T. … Electrochemical Society	8 国際会議録 Nickel Selective Etching Studies for Self-Aligned Silicide Process in Ge and SiGe-Based Devices V. Carron, M. Ribeiro, P. Besson, G. Rolland, J. Hartmann Electrochemical Society
3 国際会議録 Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si Wafers J. Hartmann, A. Papon, J. Colonna, T. Ernst, T. Billon Electrochemical Society	9 国際会議録 Ge Diffusion in Strained Si / Relaxed SiGe Heterostrucutures Y. Bogumilowicz, J. Barnes, P. Holliger, D. Rouchon, N. Daval Electrochemical Society
4 国際会議録 Strained Silicon on Insulator Wafers Made by the Smart CutTM Technology Ghyselen, B., Bogumilowicz, Y., Aulnette, C., Abbadie, A., Osternaud, B., Besson, P., Daval, N., Andrieu, F., … Materials Research Society	10 国際会議録 Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO2 Thin Films Blin, D., Rochat, N., Rolland, G., Holliger, P., Martin, F., Damlencourt, J.-F., Lardin, T., Besson, P., Haukka, S., … SPIE-The International Society for Optical Engineering
5 国際会議録 (17.0) 8:00 - 8:10 AM-Welcome (17.1) 8:10 - 8:30 AM - RP-CVD Grown Ge Islands for 1.3-1.6um Photodetection Damlencourt, J. F., Vandelle, B., Cluzel, B., Calvo, V., David, S., Hartmann, J-M., Fedeli, J-M., Billon, T. … Electrochemical Society	11 国際会議録 Analytical Characterization of Process Parameter Influence on the Initial Growth and Crystallinity of Atomic Layer Deposition HfO2 Thin Films Bun, D., Rochat, N., Rolland, G., Holliger, P., Martin, F., Damlencourt, J.-F., Lardin, T., Besson, P., Haukka, S., … Electrochemical Society
6 国際会議録 Reduced Pressure-Chemical Vapor Deposition of High Ge Content (20%-55%) SiGe Virtual Substrates Bogumilowicz, Y., Hartmann, J.M., Laugier, F., Rolland, G., Billon, T., Renard, V., Olshanetsky, E.B., Estibals, O., … Materials Research Society	12 国際会議録 Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%) J. Hartmann, L. Baud, G. Rolland, J.M. Fabbri, T. Billon Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12