(8.3) 4:55 - 5: 15 PM - Low Temperature SiGe Process for Defect-Free Epitaxy and Smooth Morphology

(8.3) 4:55 - 5: 15 PM - Low Temperature SiGe Process for Defect-Free Epitaxy and Smooth Morphology

著者名:

掲載資料名:

SiGe: materials, processing, and devices : proceedings of the First international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-07

発行年:

2004

開始ページ:

581

終了ページ:

588

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774208 [1566774209]

言語:

英語

請求記号:

E23400/200407

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015397
シリーズID:	PA00000028
会議名:	SiGe: Materials, Processing, and Devices Symposium ; Meeting of the Electrochemical Society ; Fall Meeting of the Electrochemical Society of Japan
回次:	1st ; 206th ; 2004
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

類似資料:

1 国際会議録 (8.2) 4:35 - 4:55 PM - A Hydrogen Pre-bake Process for Si Epitaxy on SiGe Surface Chen, H., Bedell, S. W., Murphy, R. J., Mocuta, D. M., Turansky, A. R, Domenicucci, A. G., Sadana, D. K. (IBM) Electrochemical Society	7 国際会議録 *ELECTRICAL PROPERTIES OF Si/SiGe STRUCTURES GROWN BY LOW TEMPERATURE EPITAXY Temkin, H., Green, M. L., Brasen, D., Bean. J. C. Materials Research Society
2 国際会議録 (4.31) 8:55 - 8:58 PM - VBIC Model Application and Model Parameter Optimization for SiGe HBT Lee, S.-H., Lee, J.-Y., Lee, S.-Y., Park, C. W., Bae, H.-C., Kang, J.-Y.(ETRI) Electrochemical Society	8 国際会議録 SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology J.R. Holt, E.C. Harley, T.N. Adam, S. Jeng, K. Tabakman Electrochemical Society
3 国際会議録 (8.4) 5:15 - 5:35 PM - A Novel, High Quality SiGe Graded Buffer Growth Process Using GeCl4 Westhoff, R., Carlin, J., Erdtmann, M., Langdo, T., Leitz, C., Y., V., Petrocelli, K., Bulsara, M., Fitzgerald, E.A., … Electrochemical Society	9 国際会議録 SPUTTERING INDUCED CHANGES IN DEFECT MORPHOLOGY AND DOPANT DIFFUSION FOR Si IMPLANTED GaAs: INFLUENCE OF ION ENERGY AND IMPLANT TEMPERATURE Robinson, H. G., Lee, C. C., Haynes, T. E., Allen, E. L., Deal, M. D., Jones, K. S. MRS - Materials Research Society
4 国際会議録 (8.5) 5:35 - 5:55 PM - Investigation of Facet Formation in RTCVD Si/SiGe Selective Epitaxy Talbot, A., Arcamone, J., Fellous, C., Deleglise,　F., Dutartre, D. (STMicroelectronics) Electrochemical Society	10 国際会議録 Defects in Low-Temperature MBE-Grown Si and SiGe/Si Structures Chen, W. M., Buyanova, I. A., Monemar, B. MRS - Materials Research Society
5 国際会議録 Magnetic Anisotropy Effect in the Ultra Soft Magnetic Fe75.5Zr8.3N16.2 Thin Film Lee, H., Cho, W.-S, Kim, T.-S., Lee, K.-J., Kim, C.O. Trans Tech Publications	11 国際会議録 Hardening and Defect Structures in Thermomechanically Processed Al-2.5Cu-1.5Mg (wt.%) Alloy Raviprasad, K., Hutchinson, C. R., Ringer, S. P. Trans Tech Publications
6 国際会議録 Charge ordering temperatures of Bi1-xSrxMnO3 (0.45 - x - 0.8) [5932-83] Kim, B. H., Kim, J. S., Kim, M. S., Zhang, C. J., Kim, K. H., Kim, B. G., Kim, H. C., Park, Y. W. SPIE - The International Society of Optical Engineering	12 国際会議録 Interface Morphology and Solute Partition during Directional Solidification Process of Al-1.5Cu-3Zn Alloy Chen, F., Jie, W. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12