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(6.3) 11:35 - 11:55 AM - Schottky Barrier Height Engineering with a Strained-Si channel for Sub-50nm Gate Schottky Source/Drain MOSFETs

著者名:
掲載資料名:
SiGe: materials, processing, and devices : proceedings of the First international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-07
発行年:
2004
開始ページ:
471
終了ページ:
482
総ページ数:
12
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
言語:
英語
請求記号:
E23400/200407
資料種別:
国際会議録

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