Homoepitaxial Growth of Iron-Doped 4H-SiC by Bis-Trimethylsilylmethane and Ferrocene Precursors for Semi-Insulating Si

Homoepitaxial Growth of Iron-Doped 4H-SiC by Bis-Trimethylsilylmethane and Ferrocene Precursors for Semi-Insulating Si

著者名:

Song, H. K.

掲載資料名:

State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-06

発行年:

2004

開始ページ:

582

終了ページ:

586

総ページ数:

5

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774192 [1566774195]

言語:

英語

請求記号:

E23400/200406

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015396
シリーズID:	PA00000028
会議名:	Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; State-of-the-Art Program on Compound Semiconductors ; Meeting of the Electrochemical Society
回次:	5th ; 41st ; 206th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

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1 国際会議録 Homoepitaxial Growth of Al-Doped 4H-SiC Using Bis-Trimethylsilylmethane Precursor Song, H. K., Um, M. Y., Na, H. J., Kim, D. H., Song, I. B., Jung, S. Y., Jeong, J. K., Lee, J. B., Kim, H. J. Trans Tech Publications	7 国際会議録 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates J.H. Yim, H.K. Song, J.H. Moon, H.S. Seo, J.H. Lee, H.J. Na, J.B. Lee, H.J. Kim Trans Tech Publications
2 国際会議録 Homoepitaxial Growth of Vanadium-Doped 4H-SiC Using Bis-Trimethylsilylmethane and Verrocene Precursors H.K. Song, H.S. Seo, J.H. Moon, J.H. Yim, J.H. Lee, S.Y. Kwon, H.J. Na, H.J. Kim Trans Tech Publications	8 国際会議録 Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis- Trimethylsilylmethane Precursor H.K. Song, J.H. Lee, M.S. Oh, J.H. Moon, H.S. Seo Trans Tech Publications
3 国際会議録 Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane Precursor Jeong, J. K., Um, M. Y., Na, H. J., Kim, B. S., Song, I. B., Kim, H. J. Trans Tech Publications	9 国際会議録 Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM H.S. Seo, H.G. Song, J.H. Moon, J.H. Yim, M.S. Oh Trans Tech Publications
4 国際会議録 Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property Song, H.K., Moon, J.H., Yim, J.H., Kim, H.J. Trans Tech Publications	10 国際会議録 4H-SiC Planar MESFETs With fmax of 40 GHz Without Trapping Effect Na, H.J., Jung, S.Y., Yim, J.H., Urn, M.Y., Song, H.K., Kim, H.J. Electrochemical Society
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6 国際会議録 Homoepitaxial Growth of Semi-Insulating 4H-SiC by Metal-Organic Precursors H. Kim, H. Song Electrochemical Society	12 国際会議録 Growth of GaN Films on Porous 4H-SiC Substrate by Metal-Organic Chemical Vapor Deposition Jeong, J.K., Song, H.K., Um, M.Y., Kim, H.J., Seo, H.C., Yoon, E., Hwang, C.S. Trans Tech Publications

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