Enhancement of lonization Efficiency of Acceptors by Their Excited States in Heavily Doped p-Type GaN and Wide Bandgap Semiconductors

Enhancement of lonization Efficiency of Acceptors by Their Excited States in Heavily Doped p-Type GaN and Wide Bandgap Semiconductors

著者名:: Matsuura, H.
掲載資料名:: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
シリーズ名:: Electrochemical Society Proceedings Series
シリーズ巻号:: 2004-06
発行年:: 2004
開始ページ:: 570
終了ページ:: 581
総ページ数:: 12
出版情報:: Pennington, N.J.: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566774192 [1566774195]
言語:: 英語
請求記号:: E23400/200406
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00015396
シリーズID:	PA00000028
会議名:	Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; State-of-the-Art Program on Compound Semiconductors ; Meeting of the Electrochemical Society
回次:	5th ; 41st ; 206th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2004.10.03-2004.10.08

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