Carrier Trapping and Thermal Effects in GaN-based High-electron Mobility Transistors
- 著者名:
Dabiran, A.M. Osinsky, A. Chow, P.P. Zhang, Z. Madjar, A. Osinsky, S. Hwang, J.C.M. Fitch, R.C. Gillespie, J. Jessen, G. Moser, N. Crespo, A. - 掲載資料名:
- State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2004-06
- 発行年:
- 2004
- 開始ページ:
- 380
- 終了ページ:
- 385
- 総ページ数:
- 6
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774192 [1566774195]
- 言語:
- 英語
- 請求記号:
- E23400/200406
- 資料種別:
- 国際会議録
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